MB85RS16N FRAM: Difference between revisions

From embeddedTS Manuals
(Initial creation of subpage)
 
(Update units)
 
Line 1: Line 1:
The unit supports an optional non-volatile Ferroelectric RAM (FRAM) device.  The Fujitsu MB85RS16N is a 2kbyte device, in a configuration not unlike an SPI EEPROM.  However, the nature of FRAM means it is non-volatile, incredibly fast to write, and is specified with 1 trillion read/write cycles per each byte and a 200 year data retention.  The device is connected to Linux and presents itself as a flat file that can be read and written like any standard Linux file.
This device supports an optional non-volatile Ferroelectric RAM (FRAM) device.  The Fujitsu MB85RS16N is a 2 KiB device, in a configuration not unlike an SPI EEPROM.  However, the nature of FRAM means it is non-volatile, incredibly fast to write, and is specified with 1 trillion read/write cycles per each byte and a 200 year data retention.  The device is connected to Linux and presents itself as a flat file that can be read and written like any standard Linux file.

Latest revision as of 14:36, 19 October 2021

This device supports an optional non-volatile Ferroelectric RAM (FRAM) device. The Fujitsu MB85RS16N is a 2 KiB device, in a configuration not unlike an SPI EEPROM. However, the nature of FRAM means it is non-volatile, incredibly fast to write, and is specified with 1 trillion read/write cycles per each byte and a 200 year data retention. The device is connected to Linux and presents itself as a flat file that can be read and written like any standard Linux file.