TS-7180 FRAM: Difference between revisions

From embeddedTS Manuals
No edit summary
(Formatting normalization)
Line 1: Line 1:
The TS-7180 has 2 KiB ferroelectric random access memory (FRAM). This is intended to be used for values that require constant writing such as counters, but the FRAM has no practical concerns with write wearout.
{{:FM25L16B_FRAM}}


This is accessed using file I/O calls from any language using this eeprom device:
The EEPROM file can be found at <source inline>/sys/class/spi_master/spi2/spi2.2/eeprom</source>, and should be accessed like a normal file to write and read data in the FRAM.
* /sys/class/spi_master/spi2/spi2.2/eeprom

Revision as of 15:11, 19 October 2021

This platform supports a soldered-down, non-volatile Ferroelectric RAM (FRAM) device. The Cypress FM25L16B is a 2 KiB FRAM device in a configuration not unlike an SPI EEPROM. The nature of FRAM means it is non-volatile, incredibly fast to write, and is specified with 100 trillion read/write cycles (per each of the 256 sequential 8 byte rows) with a 150 year data retention at temperatures below 65 °C. The device is connected to Linux and presents itself as a flat file that can be read and written like any standard Linux file.

The EEPROM file can be found at /sys/class/spi_master/spi2/spi2.2/eeprom, and should be accessed like a normal file to write and read data in the FRAM.

Retrieved from "http://docs.embeddedTS.com/index.php?title=TS-7180_FRAM&oldid=14331"